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| MITSUBISHI IGBT MODULES CM100E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE CM100E3U-12H IC ................................................................... 100A VCES .......................................................... 600V Insulated Type 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 94 7 17 23 80 0.25 23 4 2-6.5 MOUNTING HOLES 48 E2 G2 24 C2E1 E2 C1 4 11 TAB #110. t = 0.5 12 3-M5 NUTS 12mm deep 13.5 7.5 C2E1 E2 C1 30 +1 -0.5 LABEL 21.2 CIRCUIT DIAGRAM Feb. 2009 1 E2 G2 16 2.5 25 2.5 16 13 CM MITSUBISHI IGBT MODULES CM100E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- (Tj = 25C, unless otherwise specified) Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 600 20 100 200 100 200 400 -40 ~ +150 -40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 Unit V V A A A A W C C Vrms N*m N*m g (Note 1) (Note 1) -- -- Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R VFM trr Qrr Rth(j-c) Rth(c-f) Note 1. 2. 3. 4. 5. 6. (Tj = 25C, unless otherwise specified) Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Test Conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V (Note 4) Tj = 25C Tj = 125C Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6 -- 2.4 2.6 -- -- -- 200 -- -- -- -- -- -- 0.24 -- -- -- -- 0.24 -- 0.07 Max 1 7.5 0.5 3.0 -- 8.8 4.8 1.3 -- 100 250 200 300 2.6 160 -- 0.31 0.7 2.6 160 -- 0.7 -- Unit mA V A V nF nF nF nC ns ns ns ns V ns C K/W K/W V ns C K/W K/W VCC = 300V, IC = 100A, VGE = 15V VCC = 300V, IC = 100A VGE = 15V RG = 6.3 Resistive load IE = 100A, VGE = 0V IE = 100A die / dt = -200A / s Junction to case, IGBT part Thermal resistance (Note 5) Junction to case, FWDi part Forward voltage IF = 100A, Clamp diode part Reverse recovery time IF = 100A Reverse recovery charge die / dt = -200A / s, Clamp diode part Thermal resistance (Note 5) Junction to case, Clamp diode part Contact thermal resistance Case to heat sink, conductive grease applied (Note 6) Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM100E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj=25C VGE=20 (V) 15 12 11 10 50 9 8 0 0 2 4 6 8 10 0 0 4 8 12 14 200 13 TRANSFER CHARACTERISTICS (TYPICAL) VCE = 10V COLLECTOR CURRENT IC (A) 150 COLLECTOR CURRENT IC (A) 150 100 100 50 Tj = 25C Tj = 125C 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 4 VGE = 15V Tj = 25C Tj = 125C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 10 Tj = 25C 8 3 6 IC = 200A IC = 100A 2 IC = 40A 0 0 4 8 12 16 20 2 4 1 0 0 50 100 150 200 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 101 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) Tj = 25C 7 5 3 2 Cies EMITTER CURRENT IE (A) 100 7 5 3 2 Coes 102 7 5 3 2 Cres 10-1 7 5 3 2 101 1.0 1.4 1.8 2.2 2.6 3.0 VGE = 0V 10-2 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 MITSUBISHI IGBT MODULES CM100E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 Tj = 125C tf 3 2 3 2 3 2 102 7 5 3 2 td(off) 102 7 5 3 2 trr Irr 101 7 5 3 2 td(on) VCC = 300V VGE = 15V RG = 6.3 3 5 7 102 2 3 57 tr 101 7 101 2 101 7 101 2 3 5 7 102 100 2 3 57 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 Per unit base = Rth(j - c) = 0.31K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 Per unit base = Rth(j - c) = 0.7K/W 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 100A 15 VCC = 200V VCC = 300V 10 5 0 0 50 100 150 200 250 300 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 - di /dt = 200A /s 7 7 Tj = 25C 5 5 SWITCHING TIMES (ns) |
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